The differential cross sections and generalized oscillator strengths for the low-lying excitations of the valence-shell 1e_g orbital electron in ethane have been measured for the first time at a high incident electron energy of 1500 eV and a scattering angular range of 1.5°–10°. A weak feature, termed X here, with a band center of about 7.5 eV has been observed, which was also announced by the previous experimental and theoretical studies. The dynamic behaviors of the generalized oscillator strengths for the 3s (8.7 eV), 3s+3p (9.31 eV, 9.41 eV), and X (∼7.5 eV) transitions on the momentum transfer squared have been obtained. The integral cross sections of these transitions from their thresholds to 5000 eV have been obtained with the aid of the BE-scaling (B is the binding energy and E is the excitation energy) method. The optical oscillator strengths of the above transitions determined by extrapolating their generalized oscillator strengths to the limit of the squared momentum transfer K² → 0 are in good agreement with the ones from the photoabsorption spectrum [J. W. Au et al., Chem. Phys. 173, 209 (1993)], which indicates that the present differential cross sections, generalized oscillator strengths, and integral cross sections can serve as benchmark data.

中文翻译：

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高能电子散射研究乙烷分子的价壳激发

价壳1 e _g的低洼激发的微分截面和广义振荡器强度在1500 eV的高入射电子能量和1.5°-10°的散射角范围内，首次测量了乙烷中的轨道电子。已经观察到一个弱特征，在这里称为X，其带中心约为7.5 eV，这也是先前的实验和理论研究所宣布的。在动量传递平方上获得了3s（8.7 eV），3s + 3p（9.31 eV，9.41 eV）和X（〜7.5 eV）跃迁的广义振荡器强度的动态行为。这些转变从其阈值到5000 eV的积分横截面已借助BE缩放（B是结合能，E是激发能）方法获得了。K ² →0与来自光吸收光谱的那些非常吻合[JW Au等。，化学。物理 173，209（1993）]，这表明当前的微分截面，广义振荡器强度和积分截面可以用作基准数据。