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Scalable Direct Writing of Lanthanide-Doped KMnF3 Perovskite Nanowires into Aligned Arrays with Polarized Up-Conversion Emission
Nano Letters ( IF 10.8 ) Pub Date : 2018-04-13 00:00:00 , DOI: 10.1021/acs.nanolett.8b00396
Shuo Shi 1 , Ling-Dong Sun 1 , Ying-Xian Xue 2, 3 , Hao Dong 1 , Ke Wu 1 , Shi-Chen Guo 1 , Bo-Tao Wu 2 , Chun-Hua Yan 1
Affiliation  

The use of one-dimensional nano- and microstructured semiconductor and lanthanide materials is attractive for polarized-light-emission studies. Up-conversion emission from single-nanorod or anisotropic nanoparticles with a degree of polarization has also been discussed. However, microscale arrays of nanoparticles, especially well-aligned one-dimensional nanostructures as well as their up-conversion polarization characterization, have not been investigated yet. Herein, we present a novel and facile paradigm for preparing highly aligned arrays of lanthanide-doped KMnF3 (KMnF3:Ln) perovskite nanowires, which are good candidates for polarized up-conversion emission studies. These perovskite nanowires, with a width of 10 nm and length of a few micrometers, are formed through the oriented attachment of KMnF3:Ln nanocubes along the [001] direction. By the employment of KMnF3:Ln nanowire gel as nanoink, a direct-writing method is developed to obtain diverse types of aligned patterns from the nanoscale to the wafer scale. Up-conversion emissions from the highly aligned nanowire arrays are polarized along the array direction with a polarization degree up to 60%. Taking advantage of microscopic nanowire arrays, these polarized up-conversion emissions should offer potential applications in light or information transportation.

中文翻译:

可将镧系元素掺杂的KMnF 3钙钛矿纳米线可扩展直接写入极化向上转换发射的对准阵列中。

一维纳米和微结构半导体和镧系材料的使用对于偏振光发射研究具有吸引力。还讨论了具有偏振度的单纳米或各向异性纳米粒子的上转换发射。然而,尚未研究纳米颗粒的微米级阵列,尤其是排列良好的一维纳米结构及其上转换偏振特性。在这里,我们提出了一种新颖且简便的范式,用于制备镧系元素掺杂的KMnF 3(KMnF 3:Ln)钙钛矿纳米线,是极化上转换发射研究的理想选择。这些钙钛矿纳米线的宽度为10 nm,长度为几微米,是通过沿[001]方向定向附着KMnF 3:Ln纳米立方体而形成的。通过使用KMnF 3:Ln纳米线凝胶作为纳米墨水,开发了一种直接写入方法来获得从纳米级到晶圆级的各种类型的对准图案。来自高度对准的纳米线阵列的上转换发射沿阵列方向被极化,极化程度高达60%。利用微观的纳米线阵列,这些极化的上转换发射应在光或信息传输中提供潜在的应用。
更新日期:2018-04-13
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