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Preparation and electrical characteristics of N-doped In-Zn-Sn-O thin film transistors by radio frequency magnetron sputtering
Journal of Alloys and Compounds ( IF 6.2 ) Pub Date : 2018-04-07
Jinbao Su, Ye Wang, Yaobin Ma, Qi Wang, Longjie Tian, Shiqian Dai, Ran Li, Xiqing Zhang, Yongsheng Wang

Bottom-gate top-contact thin film transistors (TFTs) with an active layer of N-doped Indium-Zinc-Tin-Oxide (IZTO:N) were prepared and their electrical properties were studied in this paper. The IZTO:N film was deposited on SiO2/Si substrates by radio frequency (RF) magnetron sputtering at room temperature. The transmittance of the IZTO:N film was over 80% in the visible range. Secondary ion mass spectrometry (SIMS) result showed all the species (In, Zn, Sn, O and N) were uniformly distributed in the film. X-ray diffraction (XRD) patterns revealed that the film was amorphous structure. The obtained IZTO:N TFT operating in the enhancement mode exhibited promising electrical performance with a high saturation mobility of 35.1 cm2/V·s, on/off current ratio of 7.2 × 107, and threshold voltage of 0.4 V.



中文翻译:

射频磁控溅射制备N掺杂In-Zn-Sn-O薄膜晶体管及其电学特性

制备了具有N掺杂铟锌锌氧化物(IZTO:N)有源层的底栅顶接触薄膜晶体管(TFT),并对其电性能进行了研究。在室温下通过射频(RF)磁控管溅射将IZTO:N膜沉积在SiO 2 / Si基板上。在可见光范围内,IZTO:N薄膜的透射率超过80%。二次离子质谱(SIMS)结果表明,所有物种(In,Zn,Sn,O和N)均均匀分布在薄膜中。X射线衍射(XRD)图表明该膜是非晶结构。获得的以增强模式工作的IZTO:N TFT具有令人满意的电性能,具有35.1 cm 2 / V·s的高饱和迁移率,开/关电流比为7.2×10 7,并且阈值电压为0.4V。

更新日期:2018-04-08
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