Nanocrystalline V₂O₅ is electrochemically deposited onto an indium tin oxide substrate in VOSO₄–based solution with various acetate additives, i.e., lithium acetate, sodium acetate, and potassium acetate. The deposition conditions including pH value and acetate additive are found to be crucial factors in influencing the deposition rate, crystallinity, and porous structure of V₂O₅ electrodes. The electrochemical capacitive behavior of the deposited V₂O₅ electrodes in KCl electrolyte is investigated by cyclic voltammetry at various scan rates, ranged from 5 to 200 mV s⁻¹. The specific capacitance of V₂O₅ electrode prepared from the potassium acetate containing plating solution is up to 350 F g⁻¹, indicating that the level of K⁺ occupancy reaches as high as 0.71. This suggests that the occupancy of K⁺ ions is in tetrahedral and eight coordinated sites in V₂O₅ crystals. The capacitance retention at 200 mV s⁻¹ compared to that at 5 mV s⁻¹ reaches to 75% for this electrode. The enhanced performance is mainly attributed to the highly porous structure which significantly increases the active sites, imparts oxide/electrolyte interfaces for energy storage, and subsequently enhances the rate of insertion/extraction of K⁺ ions. The V₂O₅ electrode is capable of delivering high energy density up to 48.6 Wh kg⁻¹, demonstrating a significant potential for thin-film energy storage devices.

纳米晶V ₂ O ₅在VOSO ₄基溶液中与各种乙酸盐添加剂（例如，乙酸锂，乙酸钠和乙酸钾）电化学沉积在铟锡氧化物基质上。已发现包括pH值和醋酸盐添加剂在内的沉积条件是影响V ₂ O ₅电极的沉积速率，结晶度和多孔结构的关键因素。通过循环伏安法在5到200 mV s ^-1范围内的各种扫描速率下研究了在KCl电解质中沉积的V ₂ O ₅电极的电化学电容行为。V ₂ O的比电容由含乙酸钾的镀液制备的第₅电极最高为350 F g ^-1，表明K ^+的吸收水平高达0.71。这表明K ⁺离子在V ₂ O ₅晶体中存在于四面体和八个配位位置。在200mV S上的电容保留^-1相比，以5mV小号^-1达到75％这个电极。增强的性能主要归因于高度多孔的结构，该结构显着增加了活性位点，赋予了氧化物/电解质界面以进行能量存储，并随后提高了K ⁺的插入/提取速率离子。V ₂ O ₅电极能够提供高达48.6 Wh kg ^-1的高能量密度，证明了薄膜能量存储设备的巨大潜力。