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Excitonic Emission of Monolayer Semiconductors Near-Field Coupled to High-Q Microresonators.
Nano Letters ( IF 10.8 ) Pub Date : 2018-04-06 , DOI: 10.1021/acs.nanolett.8b00749
Clément Javerzac-Galy 1 , Anshuman Kumar 1 , Ryan D Schilling 1 , Nicolas Piro 1 , Sina Khorasani 2 , Matteo Barbone 3 , Ilya Goykhman 3 , Jacob B Khurgin 4 , Andrea C Ferrari 3 , Tobias J Kippenberg 1
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We present quantum yield measurements of single layer WSe2 (1L-WSe2) integrated with high-Q ( Q > 106) optical microdisk cavities, using an efficient (η > 90%) near-field coupling scheme based on a tapered optical fiber. Coupling of the excitonic emission is achieved by placing 1L-WSe2 in the evanescent cavity field. This preserves the microresonator high intrinsic quality factor ( Q > 106) below the bandgap of 1L-WSe2. The cavity quantum yield is QYc ≈ 10-3, consistent with operation in the broad emitter regime (i.e., the emission lifetime of 1L-WSe2 is significantly shorter than the bare cavity decay time). This scheme can serve as a precise measurement tool for the excitonic emission of layered materials into cavity modes, for both in plane and out of plane excitation.

中文翻译:

耦合到高Q微谐振器的单层半导体近场的激子发射。

我们目前使用基于锥形光纤的有效(η> 90%)近场耦合方案,对与高Q(Q> 106)光学微盘腔集成的单层WSe2(1L-WSe2)进行量子产率测量。激子发射的耦合是通过将1L-WSe2置于van逝腔场中来实现的。这样可将微谐振器的固有固有品质因数(Q> 106)保持在1L-WSe2的带隙以下。腔量子产率为QYc≈10-3,与在宽发射体范围内的操作一致(即1L-WSe2的发射寿命明显短于裸腔衰减时间)。该方案可以用作平面内和平面外激励下将层状材料激子发射到腔模中的精确测量工具。
更新日期:2018-04-06
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