In this paper, we report the study of transport and magnetic properties of ytterbium hexaboride (YbB₆) nanowires grown by a low trigger-temperature (200–240 °C) solid state method. The temperature dependence of resistivity shows that the YbB₆ nanowire undergoes a semiconductor-insulator transition (SIT) below 20 K with an activation energy ΔE of 1 meV. The value of ρ at 2 K reaches 49 times the value of ρ at 300 K (ρ_2 K/ρ_300 K = 49). The observed non-saturating magnetoresistance (MR) has a linear relationship with B². The anomalous electronic transport in the YbB₆ nanowire can be explained by the mixed valence of Yb ions due to the boron deficiency supporting by the X-ray photoelectron spectroscopy (XPS) and paramagnetic magnetization.

在本文中，我们报告了通过低触发温度（200–240°C）固态方法生长的六硼化y（YbB ₆ ）纳米线的传输和磁性能的研究。电阻率的温度依赖性表明，YbB ₆纳米线在20 K以下经历了半导体-绝缘体跃迁（SIT），其活化能ΔE为1 meV。2 K时的ρ值达到300 K时的ρ值的49倍（ρ2 _K / ρ300 _K = 49）。观察到的非饱和磁阻（MR）与B ²具有线性关系。YbB _6中的异常电子传输纳米线可以通过X射线光电子能谱（XPS）和顺磁磁化作用支持的硼缺乏来解释Yb离子的混合价。