High performant hole-injection materials find important applications in organic electronics. In this contribution we report a simple small-molecule organic hole-injection/transport material N,N, N′,N′-tetra(4-methoxyphenyl)-[2,2′-binaphthalene]-6,6′-diamine for organic light-emitting diodes (OLEDs). It shows a high thermal and morphological stability with a T_g of 99 °C. The ultraviolet photoelectron spectroscopy measurements reveal a favorable HOMO level of −5.05 eV p-Doping with tetrafluorotetracyanoquinodimethane (F4-TCNQ) increases the hole conductivity up to 2.64 × 10⁻⁴ S m⁻¹ vs. 1.68 × 10⁻⁴ S m⁻¹ of the neat film. The characterization of the red and green phosphorescent OLEDs suggests that introducing this thick p-doped hole-injection layer may yield high electroluminescent efficiency and operational stability. Moreover the new compound shows enhanced thermal and conducting properties and thus better performances in contrast with a conventional hole-injection material N,N,N′,N′-tetra(4-methoxy-phenyl)-[1,10-biphenyl]-4,4′- diamine (MeO-TPD) in the OLEDs.

高性能空穴注入材料在有机电子学中发现了重要的应用。在这项贡献中，我们报告了一种简单的小分子有机空穴注入/传输材料N，N，N'，N'-四（4-甲氧基苯基）-[2,2'-联萘] -6,6'-二胺有机发光二极管（OLED）。它显示出高的热和形态稳定性，T _g为99°C。紫外光电子能谱测量表明，良好的HOMO能级为-5.05 eV p-掺杂四氟四氰基喹二甲烷（F4-TCNQ）将空穴电导率提高到2.64×10 ^-4  S m ^-1与1.68×10 ^-4  S m ^-1整洁的电影。红色和绿色磷光OLED的特性表明，引入这种厚的p掺杂空穴注入层可以产生高电致发光效率和操作稳定性。此外，与常规的空穴注入材料N，N，N'，N'-四（4-甲氧基-苯基）-[1,10-联苯]-相比，该新化合物显示出增强的导热性和导电性，因此具有更好的性能。4,4 ' -在所述OLED二胺（的MeO-TPD）。