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Tuning of physical and electrochemical properties of nanocrystalline tungsten oxide through ultraviolet photoactivation
Electrochimica Acta ( IF 6.6 ) Pub Date : 2018-04-05
P.T.G. Gayathri, S. Sajitha, I. Vijitha, S.S. Shaiju, R. Remya, Biswapriya Deb

In this paper, we demonstrate the use of ultraviolet (UV, 365 nm) photoactivation to induce functional changes in the nanocrystalline tungsten oxide (n-WO3) surfaces. n-WO3 was initially synthesized by dissolving hydrated-WO3 powder in 10% H2O2 with and without UV exposure. The photoactivation triggered homogeneous ligand-stripping in WO3 seeds that transformed the random-shaped clusters observed in the unexposed solution into a mono-modal distribution of spherical aggregates. These aggregates were electrophoretically collected as a coating that exposed to a second installment of UV soaking to explore photoactivation effects in the film state. A significant network densification is observed as photo-decomposition of bridging ligands facilitated direct interactions of surface dipoles in those films. Experiments showed that the photodecomposition mechanism predominantly depends upon the discharge of oxygen atoms localized on the material surface that can also create donor type oxygen vacancies. Electrochemical studies showed that the photoactivation led up to ∼2.8 enhancement in the surface donor density and considerably improved the interfacial charge transfer. The photoactivated electrodes exhibited up to ∼33% increment in the areal capacitance (Ca) due to the increased number of active sites in the interface. Electrochromic (EC) response from the same electrodes produced ∼57% improvement in the optical density (OD).



中文翻译:

通过紫外光活化法调节纳米氧化钨的物理和电化学性质

在本文中,我们证明了使用紫外线(UV,365 nm)光激活来诱导纳米晶氧化钨(n-WO 3)表面的功能变化。n-WO 3最初是通过将水合WO 3粉末溶解在10%H 2 O 2中(有和没有UV暴露)而合成的。光活化触发了WO 3中的均相配体剥离种子将未暴露溶液中观察到的随机形状的簇转变为球形聚集体的单峰分布。电泳收集这些聚集体作为涂层,将其暴露于第二批UV浸泡中,以探索薄膜状态下的光活化作用。观察到显着的网络致密化,因为桥接配体的光分解促进了那些膜中表面偶极子的直接相互作用。实验表明,光分解机理主要取决于位于材料表面的氧原子的释放,这也会产生供体型氧空位。电化学研究表明,光活化导致了〜2.8 表面供体密度的提高,并大大改善了界面电荷转移。由于界面中活性位点数量的增加,光活化电极的面电容(C a)最多增加约33%。来自相同电极的电致变色(EC)响应可使光密度(OD)提高约57%。

更新日期:2018-04-06
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