High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.

中文翻译：

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高速和片上石墨烯黑体发射器，用于通过远程热传递进行光通信。

集成在硅芯片上的高速发光器可以为基于硅的光电技术提供新颖的架构，例如片上光学互连和硅光子学。然而，基于化合物半导体的常规光源由于其难以在硅衬底上直接生长而面临着与基于硅的平台集成的主要挑战。在这里，我们报告了在包括电信波长在内的近红外区域中，超高速（响应时间为100 ps），高度集成的基于石墨烯的硅芯片黑体发射器。它们的发射响应受石墨烯与基板接触的强烈影响，具体取决于石墨烯层的数量。超高速发射可以通过经由衬底的表面极性声子的远程量子热传输来理解。我们演示了实时光通信，集成的二维阵列发射器，在空气中可操作的带帽发射器以及光纤与发射器的直接耦合。这些发射器可为通向高度集成的光电和硅光子学的片上硅，小尺寸和高速发射器开辟新途径。