Dip pen nanolithography (DPN) is used to pattern single‐walled carbon nanotube (SWCNT) lines between the n‐type Si and SWCNT film in SWCNT/Si solar cells. The SWCNT ink composition, loading, and DPN pretreatment are optimized to improve patterning. This improved DPN technique is then used to successfully pattern >1 mm long SWCNT lines consistently. This is a 20‐fold increase in the previously reported direct‐patterning of SWCNT lines using the DPN technique, and demonstrates the scalability of the technique to pattern larger areas. The degree of the uniformity of SWCNTs in these lines is further characterized by Raman spectroscopy and scanning electron microscopy. The patterned SWCNT lines are used as thin conductive pathways in SWCNT/Si solar cells, similar to front contact electrodes. The critical parameters of these solar cells are measured and compared to control cells without SWCNT lines. The addition of SWCNT lines increases power conversion efficiency by 40% (relative). Importantly, the SWCNT lines reduce average series resistance by 44%, and consequently increase average fill factor by 24%.

中文翻译：

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使用蘸水笔纳米光刻技术对SWCNT /硅太阳能电池进行直接图案化SWCNT

浸笔式纳米光刻（DPN）用于在SWCNT / Si太阳能电池中的n型Si和SWCNT膜之间形成单壁碳纳米管（SWCNT）线的图案。优化了SWCNT墨水的成分，填充量和DPN预处理，以改善构图。然后，使用这种改进的DPN技术成功地连续图案化1mm以上长的SWCNT线。这是先前报道的使用DPN技术对SWCNT线进行直接图案化的20倍，并且证明了该技术对较大区域进行图案化的可扩展性。这些线中SWCNT的均匀度通过拉曼光谱和扫描电子显微镜进一步表征。图案化的SWCNT线用作SWCNT / Si太阳能电池中的薄导电路径，类似于正面接触电极。测量这些太阳能电池的关键参数，并将其与没有SWCNT线的对照电池进行比较。添加SWCNT线可将功率转换效率提高40％（相对）。重要的是，SWCNT线将平均串联电阻降低了44％，因此平均填充系数提高了24％。