Abstract The laminated silicon carbide/titanium silicon (SiC/TiSi 2 ) and silicon carbide/titanium silicon carbide (SiC/Ti 3 SiC 2 ) ceramics were successfully designed and fabricated by liquid silicon (Si) infiltration. When the thickness of TiC layer was 150 and 450 µm, the TiSi 2 and Ti 3 SiC 2 phases were the main products in the TiC layer, respectively. The as-fabricated structural unit of laminated SiC/Ti 3 SiC 2 ceramics consisted of five layers of functionally graded materials, which has multiscale layered structure containing macro-layered structure and nano layered structure. The generation of hierarchical structure was attributed to the diffusion of Ti elements and in-situ formation of TiSi 2 and Ti 3 SiC 2 . The growth direction of Ti 3 SiC 2 was anisotropic, thus providing more paths for the crack propagation via deflection, branching, and delamination during fracture process. However, the crack propagation inside the Ti 3 SiC 2 phase included the pull out, bridging, lamination, deflection, and fracture of the single layer, which are the energy absorption and damage tolerance mechanisms of the Ti 3 SiC 2 phase.

中文翻译：

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通过液态硅渗透原位制备层压 SiC/TiSi 2 和 SiC/Ti 3 SiC 2 陶瓷

摘要 采用液态硅(Si)浸润法成功设计并制备了碳化硅/钛硅(SiC/TiSi 2 )和碳化硅/钛碳化硅(SiC/Ti 3 SiC 2 )叠层陶瓷。当 TiC 层的厚度为 150 和 450 μm 时，TiSi 2 和 Ti 3 SiC 2 相分别是 TiC 层中的主要产物。叠层SiC/Ti 3 SiC 2 陶瓷的制备结构单元由五层功能梯度材料组成，具有包括宏观层状结构和纳米层状结构在内的多尺度层状结构。分层结构的产生归因于Ti元素的扩散和TiSi 2 和Ti 3 SiC 2 的原位形成。Ti 3 SiC 2 的生长方向是各向异性的，从而通过偏转、分支、和断裂过程中的分层。然而，Ti 3 SiC 2 相内部的裂纹扩展包括单层的拉出、桥接、叠层、挠曲和断裂，这些是Ti 3 SiC 2 相的能量吸收和损伤容限机制。