Abstract Ni doped Cr 2 O 3 (NCO) films have attracted much attention due to their applications in the field of photovoltaics. This study reports the tailoring of structural, electrical and optical properties as a function of Ni doping in Chromium oxide (Cr 2 O 3 ). NCO thin films were grown by Pulsed laser deposition (PLD) using 2nd harmonic Nd:YAG Laser on n-Si (100) with in-situ annealing of 450 °C. Structural analyses based on X-ray diffractometry (XRD) and Raman Spectroscopy showed the inconsistent variation in crystallinity and shift in A 1 g band in turn revealing the successful incorporation of Ni into Chromium oxide host lattice. In addition, electrical measurements also showed an inconsistent variation in resistivity ranging from 10 2 to 10 4 Ω − cm . The properties showed widening of band gap energy (E g ) from 3.41 to 3.60 eV as a function of Ni doping concentration with significantly decreased reflectance in the range of 500–600 nm thereby increasing the absorption, a pre-requisite for solar absorbers.

中文翻译：

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在 a 轴取向的 Ni 掺杂氧化铬薄膜中调整光学带隙和电导率

摘要 Ni掺杂的Cr 2 O 3 (NCO)薄膜因其在光伏领域的应用而备受关注。该研究报告了根据氧化铬 (Cr 2 O 3 ) 中的 Ni 掺杂量调整结构、电学和光学特性。NCO 薄膜通过脉冲激光沉积 (PLD) 使用二次谐波 Nd:YAG 激光在 n-Si (100) 上生长，原位退火温度为 450 °C。基于 X 射线衍射 (XRD) 和拉曼光谱的结构分析显示结晶度的不一致变化和 A 1 g 带的偏移反过来又揭示了 Ni 成功掺入氧化铬主晶格。此外，电气测量还显示电阻率在 10 2 至 10 4 Ω - cm 范围内不一致。性能显示带隙能量 (E g ) 从 3.41 加宽到 3。