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A new catalyst of [email protected] for hydrogen evolution reaction
International Journal of Hydrogen Energy ( IF 7.2 ) Pub Date : 2018-03-22 , DOI: 10.1016/j.ijhydene.2018.02.186
Bulut Hüner , Murat Farsak , Esra Telli

Thin films of undoped ZnO, Al-doped ZnO, Cu-doped ZnO, and [email protected] deposited on indium tin oxide were performed by the sol-gel spin coating method. The prepared ZnO thin films were investigated for their structural and electrical properties after annealing at 500 °C for 1 h. ZnO thin films were characterized by electrochemical impedance spectroscopy, linear sweep voltammetry, scanning electron microscopy, Fourier transform infrared spectroscopy and Mott Schottky. According to the results obtained from the Nyquist diagrams of the ZnO thin films, the resistance value was found to decrease with binary doping and the resistance value was found to be lowest in [email protected] doped thin film containing 0.01 M Al and 0.1 M Cu. As ZnO thin films go to cathodic potentials, it is seen that the cathodic current value of ZnO with undoped is the lowest. It has been found that only Al and Cu doping showed less cathodic current than double doping.



中文翻译:

一种新的[email protected]催化剂,用于氢气释放反应

通过溶胶-凝胶旋涂法在铟锡氧化物上沉积了未掺杂的ZnO,Al掺杂的ZnO,Cu掺杂的ZnO和[email protected]薄膜。研究了制备的ZnO薄膜在500°C退火1 h后的结构和电性能。ZnO薄膜的特征在于电化学阻抗谱,线性扫描伏安法,扫描电子显微镜,傅立叶变换红外光谱和Mott Schottky。根据从ZnO薄膜的奈奎斯特图获得的结果,发现电阻值随二元掺杂而降低,并且在包含0.01 M Al和0.1 M Cu的[电子邮件保护]掺杂的薄膜中,电阻值最低。 。随着ZnO薄膜进入阴极电位,可以看出,未掺杂的ZnO的阴极电流值最低。已经发现,仅Al和Cu掺杂显示出比双掺杂更少的阴极电流。

更新日期:2018-03-22
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