Near-infrared photodetectors (NIRPDs) have attracted great attention because of their wide range of applications in many fields. Herein, a novel self-driven NIRPD at the wavelength of 980 nm is reported based on the graphene/GaAs heterostructure. Extraordinarily, its sensitivity to light illumination (980 nm) is far beyond the absorption limitation of GaAs (874 nm). This means that the photocurrent originates from the separation of photo-induced carriers in graphene, which is caused by the vertically built-in electric field formed through the high quality van der Waals contact between graphene and GaAs. Moreover, after introducing NaYF₄:Yb³⁺/Er³⁺ upconversion nanoparticles (UCNPs) onto the graphene/GaAs heterojunction, the responsivity increases to be as superior as 5.97 mA W⁻¹ and the corresponding detectivity is 1.1 × 10¹¹ cm Hz^0.5 W⁻¹ under self-driven conditions. This dramatic improvement is mainly ascribed to the radiative energy transfer from UCNPs to the graphene/GaAs heterostructure. The high-quality and self-driven UCNPs/graphene/GaAs heterostructure NIRPD holds significant potential for practical application in low-consumption and large-scale optoelectronic devices.

中文翻译：

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具有上转换纳米粒子的石墨烯/ GaAs自驱动近红外光电探测器的性能增强†

由于近红外光电探测器（NIRPD）在许多领域中的广泛应用，因此引起了极大的关注。本文中，基于石墨烯/ GaAs异质结构报道了一种新型的自驱动NIRPD，其波长为980 nm。尤其是，它对光照（980 nm）的灵敏度远远超出了GaAs（874 nm）的吸收极限。这意味着光电流源自石墨烯中光生载流子的分离，这是由石墨烯与GaAs之间的高质量范德华接触形成的垂直内置电场引起的。此外，在介绍了NaYF _4之后：Yb ³⁺ / Er ³⁺上转换纳米粒子（UCNPs）到石墨烯/ GaAs异质结上，在自驱动条件下，响应度提高到5.97 mA W ^-1更好，相应的检测率为1.1×10 ¹¹ cm Hz ^0.5 W ^-1。这种显着改善主要归因于从UCNPs到石墨烯/ GaAs异质结构的辐射能转移。高质量且自驱动的UCNP /石墨烯/砷化镓异质结构NIRPD在低功耗和大规模光电器件中的实际应用具有巨大潜力。