Abstract Barkhausen noise, driven by thermal fluctuations in stationary magnetic field, and Barkhausen jumps, driven by sweeping magnetic field, are demonstrated to be effects of different orders of magnitude. The critical magnetic field for domain walls depinning, followed by avalanched and irreversible magnetization jumps, is determined. Magnetoresistive response of NiFe/M/NiFe (M = Au, Ta, Ag) trilayers to stationary and sweeping magnetic field is studied by means of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) measurements. Thermal fluctuations result in local and reversible changes of magnetization of the layers in thin film magnetic junctions, while the sweeping magnetic field results in reversible and irreversible avalanched domain motion, dependently on the ratio between the values of sweeping magnetic field and domain wall depinning field. The correlation between AMR and PHE responses to Barkhausen jumps is studied. The value of this correlation is found to be dependent on the α angle between the directions of magnetic field and current path.

中文翻译：

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基于磁性薄膜的交叉结中的自由和受迫巴克豪森噪声

摘要 由静止磁场中的热波动驱动的巴克豪森噪声和由扫描磁场驱动的巴克豪森跳跃被证明是不同数量级的影响。确定畴壁脱钉的临界磁场，然后是雪崩和不可逆磁化跳跃。通过各向异性磁阻 (AMR) 和平面霍尔效应 (PHE) 测量，研究了 NiFe/M/NiFe（M = Au、Ta、Ag）三层对固定和扫描磁场的磁阻响应。热波动导致薄膜磁结中各层磁化强度的局部和可逆变化，而扫掠磁场导致可逆和不可逆的雪崩畴运动，取决于扫描磁场和畴壁脱钉场值之间的比率。研究了 AMR 和 PHE 对巴克豪森跳跃的反应之间的相关性。发现该相关性的值取决于磁场方向和电流路径之间的α角。