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Tailoring magnetic properties of Co nanocluster assembled films using hydrogen
Journal of Magnetism and Magnetic Materials ( IF 2.7 ) Pub Date : 2018-07-01 , DOI: 10.1016/j.jmmm.2018.03.038
C.P. Romero , A. Volodin , H. Paddubrouskaya , M.J. Van Bael , C. Van Haesendonck , P. Lievens

Abstract Tailoring magnetic properties in nanocluster assembled cobalt (Co) thin films was achieved by admitting a small percentage of H2 gas (∼2%) into the Co gas phase cluster formation chamber prior to deposition. The oxygen content in the films is considerably reduced by the presence of hydrogen during the cluster formation, leading to enhanced magnetic interactions between clusters. Two sets of Co samples were fabricated, one without hydrogen gas and one with hydrogen gas. Magnetic properties of the non-hydrogenated and the hydrogen-treated Co nanocluster assembled films are comparatively studied using magnetic force microscopy and vibrating sample magnetometry. When comparing the two sets of samples the considerably larger coercive field of the H2-treated Co nanocluster film and the extended micrometer-sized magnetic domain structure confirm the enhancement of magnetic interactions between clusters. The thickness of the antiferromagnetic CoO layer is controlled with this procedure and modifies the exchange bias effect in these films. The exchange bias shift is lower for the H2-treated Co nanocluster film, which indicates that a thinner antiferromagnetic CoO reduces the coupling with the ferromagnetic Co. The hydrogen-treatment method can be used to tailor the oxidation levels thus controlling the magnetic properties of ferromagnetic cluster-assembled films.

中文翻译:

使用氢调整 Co 纳米团簇组装薄膜的磁性能

摘要 通过在沉积前将少量 H2 气体 (~2%) 引入 Co 气相团簇形成室,可以调整纳米团簇组装的钴 (Co) 薄膜的磁性。团簇形成过程中氢的存在显着降低了薄膜中的氧含量,从而增强了团簇之间的磁相互作用。制造了两组 Co 样品,一组没有氢气,一组有氢气。使用磁力显微镜和振动样品磁强计比较研究了未氢化和经氢处理的 Co 纳米团簇组装膜的磁性能。当比较两组样品时,H2 处理的 Co 纳米团簇薄膜的相当大的矫顽场和扩展的微米级磁畴结构证实了团簇之间磁相互作用的增强。反铁磁 CoO 层的厚度通过此程序控制,并修改这些薄膜中的交换偏置效应。H2 处理过的 Co 纳米团簇薄膜的交换偏压较低,这表明较薄的反铁磁 CoO 减少了与铁磁 Co 的耦合。氢处理方法可用于调整氧化水平,从而控制铁磁的磁性簇组装薄膜。反铁磁 CoO 层的厚度通过此程序控制,并修改这些薄膜中的交换偏置效应。H2 处理过的 Co 纳米团簇薄膜的交换偏压较低,这表明较薄的反铁磁 CoO 减少了与铁磁 Co 的耦合。氢处理方法可用于调整氧化水平,从而控制铁磁的磁性簇组装薄膜。反铁磁 CoO 层的厚度通过此程序控制,并修改这些薄膜中的交换偏置效应。H2 处理过的 Co 纳米团簇薄膜的交换偏压较低,这表明较薄的反铁磁 CoO 减少了与铁磁 Co 的耦合。氢处理方法可用于调整氧化水平,从而控制铁磁的磁性簇组装薄膜。
更新日期:2018-07-01
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