Abstract During the growth of [0 0 1]-oriented, heavily n-type doped silicon crystals by the Czochralski (CZ) method dislocation formation occurs frequently which leads to a reduction of the crystal yield. In this publication the evolution of the solid-liquid interface and the formation of the {1 1 1} edge facets are analyzed on a microscopic scale as possible reason for dislocation formation in heavily n-type doped [0 0 1]-oriented CZ crystals. A correlation between the length of the {1 1 1} edge facets and the curvature of the interface is found. They ultimately promote supercooled areas and interrupted growth kinetics, which increase the probability for dislocation formation at the boundary between the {1 1 1} edge facets and the atomically rough interface.

中文翻译：

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用直拉法生长重掺杂 n 型硅过程中的边缘刻面动力学

摘要 在采用直拉法(Czochralski, CZ)法生长[0 0 1]取向的重n型掺杂硅晶体的过程中，经常发生位错形成，导致晶体产率降低。在本出版物中，在微观尺度上分析了固液界面的演变和 {1 1 1} 棱面的形成，这可能是导致重 n 型掺杂 [0 0 1] 取向 CZ 晶体中位错形成的原因. 发现了 {1 1 1} 边缘刻面的长度与界面曲率之间的相关性。它们最终会促进过冷区域和中断的生长动力学，这增加了在 {1 1 1} 边缘面和原子粗糙界面之间的边界处形成位错的可能性。