We demonstrate room temperature operation of In0.5Ga0.5Sb/InAs type-II quantum well photodetectors on an InAs substrate grown by metal-organic chemical vapor deposition. At 300 K, the detector exhibits a dark current density of 0.12 A/cm2 and a peak responsivity of 0.72 A/W corresponding to a quantum efficiency of 23.3%, with the calculated specific detectivity of 2.4 × 109 cm Hz1/2/W at 3.81 μm.

中文翻译：

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MOCVD 生长的 InxGa1−xSb/InAs II 型量子阱红外光电探测器的室温操作

我们展示了 In0.5Ga0.5Sb/InAs II 型量子阱光电探测器在通过金属有机化学气相沉积生长的 InAs 衬底上的室温操作。在 300 K 时，探测器的暗电流密度为 0.12 A/cm2，峰值响应率为 0.72 A/W，对应于 23.3% 的量子效率，计算出的比探测率为 2.4 × 109 cm Hz1/2/W 3.81 微米。