Abstract It is a challenge to synthesize ultra-pure one-dimensional Ge3N4 nanomaterials because the current synthetic approaches are difficult to avoid oxygen to form GeOx. In this paper, we provide a novel approach to synthesize ultra-pure Ge3N4 nanowires by directly nitriding nanocrystalline Ge powder at a relatively lower temperature of 600 °C in NH3 atmosphere. The nanocrystalline Ge powder is prepared using a liquid nitrogen cryomilling method, and an amorphous GeNx layer is formed on the surface of Ge powder to significantly block oxidation. The obtained single-crystal α-Ge3N4 nanowires are ~ 80 nm in width and several tens of micrometers in length. The photoluminescence property of α-Ge3N4 nanowires has also been investigated. The result exhibits a blue-green luminescence property with the main peak at 440 nm, which is originated from the electronic transition from the conduction band to valence band.

中文翻译：

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超纯α-Ge 3 N 4 纳米线的合成及光致发光

摘要 目前的合成方法难以避免氧形成GeOx，因此合成超纯一维Ge3N4 纳米材料是一个挑战。在本文中，我们提供了一种通过在 NH3 气氛中在 600°C 的相对较低温度下直接氮化纳米晶 Ge 粉末来合成超纯 Ge3N4 纳米线的新方法。采用液氮低温研磨法制备纳米晶Ge粉，在Ge粉表面形成非晶GeNx层，显着阻断氧化。获得的单晶 α-Ge3N4 纳米线宽约 80 nm，长几十微米。还研究了 α-Ge3N4 纳米线的光致发光特性。结果显示出蓝绿色发光特性，主峰位于 440 nm，