Owing to their desirable electrical and thermoelectric properties, transition metal dichalcogenides (TMDs) have attracted significant attention. It is important to develop an easy synthetic method and a simple device fabrication process for TMDs. In this study, WSe₂ films were synthesized on a large scale by thermally assisted conversion (TAC) of W films on SiO₂/Si substrates at 600 °C. The TAC process yields homogeneous polycrystalline films of controlled thickness over large areas which have the advantage that they can be adapted for mass production for applications in electronics and thermoelectrics. In this regard, pre‐patterning of the deposited metal films allows for devices to be easily fabricated without any etch process. UV‐lithography‐defined W structures have been deposited and after conversion to WSe₂ their electrical and thermoelectric properties have been studied. Using e‐beam lithography, a field effect transistor (FET) with a WSe₂ channel was fabricated. This showed p‐type behavior and reasonable field effect mobility value. The thermoelectric properties of WSe₂ thin films were analyzed by additionally integrating micro heating elements to the WSe₂ FET. The maximum Seebeck coefficient and power factor (S²·σ) values were calculated to be ≈61 mV·K⁻¹ (V_g = 45 V) and ≈1.3 nW·K⁻²·cm⁻¹, respectively.

中文翻译：

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多晶WSe2中场相关的电和热传输

由于其所需的电和热电性质，过渡金属二卤化物（TMD）引起了极大的关注。开发用于TMD的简便合成方法和简单器件制造工艺非常重要。在这项研究中，通过在SiO ₂上对W膜进行热辅助转化（TAC），大规模合成了WSe ₂膜/ Si基板在600°C下。TAC工艺可在大面积上产生厚度可控的均质多晶膜，其优点是可适用于电子和热电应用中的批量生产。在这方面，对沉积的金属膜进行预构图可轻松制造器件，而无需任何蚀刻工艺。紫外光刻定义的W结构已经沉积，转换为WSe ₂后，已经研究了它们的电学和热电学性质。使用电子束光刻技术，制造了具有WSe ₂通道的场效应晶体管（FET）。这表明p型行为和合理的场效应迁移率值。WSe ₂的热电性质通过将微型加热元件额外集成到WSe ₂ FET中来分析薄膜。计算出的最大塞贝克系数和功率因数（S ² ·σ）值分别为≈61mV·K ^-1（V _g = 45 V）和≈1.3nW·K ^-2 ·cm ^-1。