Abstract We have studied the etching of GaInNAs, GaInNAsSb, and GaNAsSb alloys by NH4OH, H2SO4, and H3PO4 based solutions. NH4OH based solutions resulted in smooth surface, while other solutions created rougher and granular surfaces. The etch rates were found to increase with the Sb content. For GaInNAs, x-ray photoelectron spectroscopy revealed the enrichment of In on the etched surfaces, indicating In or In oxides having a smaller removal rate compared to Ga or Ga oxides. The enrichment of In was associated with smoother surfaces after etching and an enhanced photoluminescence caused by lower surface recombination due to reduced surface state density.

中文翻译：

---

与 GaAs 晶格匹配的稀氮化物 GaInNAs、GaInNAsSb 和 GaNAsSb 合金的湿法蚀刻

摘要 我们研究了基于 NH4OH、H2SO4 和 H3PO4 的溶液对 GaInNAs、GaInNAsSb 和 GaNAsSb 合金的蚀刻。基于 NH4OH 的溶液产生光滑的表面，而其他溶液产生更粗糙和颗粒状的表面。发现蚀刻速率随着 Sb 含量的增加而增加。对于 GaInNAs，X 射线光电子能谱揭示了蚀刻表面上的 In 富集，表明与 Ga 或 Ga 氧化物相比，In 或 In 氧化物具有更小的去除率。In 的富集与蚀刻后更光滑的表面以及由于表面态密度降低导致的较低表面复合引起的光致发光增强有关。