This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In₂O₃ semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from ∼0.03 cm² (V s)⁻¹ to ∼3.0 cm² (V s)⁻¹. The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits.

中文翻译：

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带有喷墨印刷的Ag源漏电极的高性能溶液处理氧化物薄膜晶体管†

这封信报道了采用电子传输层并入聚乙烯亚胺来设计In ₂ O ₃半导体与Ag源/漏触点之间的界面的喷墨印刷薄膜晶体管器件的制造，从而使饱和迁移率显着提高了两个数量级。幅值从〜0.03 cm ²（V s）^-1到〜3.0 cm ²（V s）^-1。改善归因于源/漏电极与下面的层之间的降低的接触电阻。结果对于完全印刷的氧化物TFT和电路非常重要。