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Structural and electrical properties tailoring of carbon nanotubes via a reversible defect handling technique
Carbon ( IF 10.9 ) Pub Date : 2018-07-01 , DOI: 10.1016/j.carbon.2018.03.029
Xin Li , Yong Cheng , Longze Zhao , Qiaobao Zhang , Ming-Sheng Wang

Abstract Irradiation with energetic particles has been recently demonstrated as an effective means to tailor the structures of a variety of materials with high precision, which, however, usually leading to irreversible degradation of the related properties due to defect introduction. Herein, we present a highly controllable defect handling approach, i.e. defect creation followed by their elimination in carbon nanotubes (CNTs). Technically, this can be accomplished by the alternate use of room-temperature electron irradiation and a separated heat treatment, as demonstrated here via in-situ transmission electron microscopy. The regarded CNTs thus undergo the order/disorder structural transition, which can be repeated up to at least 10 cycles with the CNT structural integrity largely retained. A temperature-dependent annealing experiment shows that the CNT recrystallization can be initiated at a surprisingly low temperature of ∼300 °C, and the irradiated CNTs can primarily regain their structural perfectness over 1000 °C. This technique allows for the reversible and repeatable tuning of a number of important CNT electrical properties, such as electron transport, as well as electron field emission that has never been achieved before. Furthermore, this defect handling technique has the potential as a general route for reversible tuning of other defect-dependent properties of sp2 carbon nanosystems.

中文翻译:

通过可逆缺陷处理技术定制碳纳米管的结构和电学特性

摘要 用高能粒子辐照最近已被证明是一种以高精度定制各种材料结构的有效手段,然而,由于缺陷的引入,这通常会导致相关性能的不可逆退化。在此,我们提出了一种高度可控的缺陷处理方法,即在碳纳米管 (CNT) 中产生缺陷,然后消除它们。从技术上讲,这可以通过交替使用室温电子辐射和单独的热处理来实现,如此处通过原位透射电子显微镜所示。因此,所考虑的碳纳米管经历了有序/无序结构转变,这种转变可以重复至少 10 次循环,同时在很大程度上保留了 CNT 结构的完整性。温度相关的退火实验表明,CNT 再结晶可以在 300°C 的惊人低温下开始,并且经过辐照的 CNT 可以在超过 1000°C 时基本恢复其结构完美性。该技术允许对许多重要的 CNT 电特性进行可逆和可重复的调整,例如电子传输,以及以前从未实现过的电子场发射。此外,这种缺陷处理技术有可能成为可逆调节 sp2 碳纳米系统的其他缺陷相关特性的通用途径。该技术允许对许多重要的碳纳米管电特性进行可逆和可重复的调整,例如电子传输,以及以前从未实现过的电子场发射。此外,这种缺陷处理技术有可能成为可逆调节 sp2 碳纳米系统的其他缺陷相关特性的通用途径。该技术允许对许多重要的 CNT 电特性进行可逆和可重复的调整,例如电子传输,以及以前从未实现过的电子场发射。此外,这种缺陷处理技术有可能成为可逆调节 sp2 碳纳米系统的其他缺陷相关特性的通用途径。
更新日期:2018-07-01
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