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Fiber‐Shaped ZnO/Graphene Schottky Photodetector with Strain Effect
Advanced Materials Interfaces ( IF 5.4 ) Pub Date : 2018-03-12 , DOI: 10.1002/admi.201800136
Zhengfeng Zhu 1 , Shalong Wang 1 , Ying Zhu 1 , Xuhai Liu 1 , Yousheng Zou 1 , Yu Gu 1 , Dan Ju 1 , Haibo Zeng 1
Affiliation  

The flexible fiber‐shaped photodetectors (PDs) suitable for wearable applications have recently attracted enormous research attention. However, the fiber‐shaped structures with the PN junction usually suffer from the poor interface between the all‐inorganic semiconductors and twisted linear electrodes. In this work, fiber‐shaped ZnO/graphene PDs based on a Schottky junction are constructed for the first time. The PDs exhibit excellent device performance because of the combination of the interface and strain engineering. In this novel structure, ZnO nanorod arrays are uniformly grown onto the Zn wire, and a graphene film is wrapped outside as the surface electrode. The built‐in electric field and the conformal contacts facilitate the separation and transport of photoinduced charge carriers. The photoresponsivity is as high as 1.92 A W−1. Moreover, the device performance can be further improved by applying external compressive strain due to the piezoelectric effect of ZnO. For instance, the responsivity of the PD under −0.33% compressive strain can increase by 12.5% and reach 2.16 A W−1.

中文翻译:

具有应变效应的光纤形ZnO /石墨烯肖特基光电探测器

适用于可穿戴应用的柔性光纤光电探测器(PDs)最近引起了巨大的研究关注。但是,具有PN结的纤维状结构通常会遭受全无机半导体与扭曲的线性电极之间的不良界面的困扰。在这项工作中,首次构建了基于肖特基结的纤维状ZnO /石墨烯PD。由于接口和应变工程的结合,PD表现出出色的设备性能。在这种新颖的结构中,ZnO纳米棒阵列均匀地生长在Zn线上,并且石墨烯膜包裹在外部作为表面电极。内置的电场和保形触点有助于光感应载流子的分离和传输。光敏度高达1.92 AW-1。而且,由于ZnO的压电效应,通过施加外部压缩应变可以进一步提高器件性能。例如,PD在-0.33%压缩应变下的响应度可以增加12.5%并达到2.16 AW -1
更新日期:2018-03-12
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