Abstract We report a systematic study on the optimal conditions for silicon surface preparation to ensure excellent passivation at the crystalline-amorphous silicon (c-Si/a-Si:H) interface of silicon heterojunction solar cells for both untextured and chemically textured samples. X-ray photoelectron spectroscopy (XPS) was utilized to analyse the elemental composition of known silicon impurities on the wafer surface. Surface purity and passivation quality, characterized by effective minority carrier life time (τ eff ) and implied open circuit voltage (iV OC ), were estimated using either quinhydrone-methanol solution or 10 nm intrinsic a-Si:H layers deposited using DC plasma process. This study confirms that surface damage etch (SDE), tetra-methyl ammonium hydroxide (TMAH) texturing and the subsequent TMAH residue removal are the most critical steps in the cleaning process, supporting a simplified wafer cleaning approach that is concise, repeatable and uses minimal volume of chemicals.

中文翻译：

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使用 X 射线光电子能谱和有效少数载流子寿命分析异质结太阳能电池的硅片表面制备

摘要 我们报告了一项关于硅表面制备的最佳条件的系统研究，以确保硅异质结太阳能电池的晶体-非晶硅 (c-Si/a-Si:H) 界面对未织构和化学织构的样品进行出色的钝化。X 射线光电子能谱 (XPS) 用于分析晶片表面已知硅杂质的元素组成。表面纯度和钝化质量，以有效少数载流子寿命 (τ eff ) 和隐含开路电压 (iV OC ) 为特征，使用醌氢醌甲醇溶液或使用直流等离子体工艺沉积的 10 nm 本征 a-Si:H 层进行评估. 这项研究证实了表面损伤蚀刻 (SDE)，