The present work reports on a graphene-like material that is promising for photodetection applications due to its high optical absorption and layer-dependent properties. To date, only narrowband photodetectors have been realized; therefore, extending the working wavelength is becoming more imperative for applications such as high-contrast imaging and remote sensing. In this work, we developed a novel detection technique that provides enhanced performance across the infrared and terahertz bands by using an antenna-assisted top-gated black phosphorus phototransistor. By using the proposed sophisticated design, the adverse effect due to the back-gate that is generally employed for a long-wavelength photon coupling can be eliminated. Moreover, the antenna-assisted near-field and dark current can be further tailored electromagnetically and electrostatically by employing a gate finger, thus resulting in improved detection efficiency. Various detection mechanisms such as thermoelectric, bolometric, and electron–hole generation are differentiated on the basis of the device geometry and incident wavelength. The proposed photodetector demonstrated superior performance—excellent sensitivity of more than 10 V W⁻¹, a noise equivalent power value of less than 0.1 nW Hz^−0.5, and a fast response time across disparate wavebands. Thus, the photodetector can satisfy diverse application requirements.

中文翻译：

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顶部选通的黑磷光电晶体管，用于灵敏的宽带检测†

本工作报道了一种类石墨烯材料，该材料由于其高的光吸收和依赖于层的特性而有望用于光电检测。迄今为止，仅实现了窄带光电探测器。因此，对于诸如高对比度成像和遥感等应用，延长工作波长变得越来越重要。在这项工作中，我们开发了一种新颖的检测技术，该技术通过使用天线辅助的顶控黑磷光电晶体管在红外和太赫兹波段提供增强的性能。通过使用提出的复杂设计，可以消除通常用于长波长光子耦合的背栅引起的不利影响。而且，天线辅助的近场和暗电流可以通过使用栅指进一步进行电磁和静电调整，从而提高了检测效率。根据设备的几何形状和入射波长，可以区分各种检测机制，例如热电，辐射热和电子空穴的产生。拟议的光电探测器表现出卓越的性能-超过10 VW的出色灵敏度^-1，小于0.1 nW Hz ^-0.5的噪声等效功率值以及跨不同波段的快速响应时间。因此，光电探测器可以满足各种应用需求。