A new device structure of oxide thin‐film transistor (TFT) having lower overlap capacitance without scarifying the drain current is proposed. This can be used for high‐speed circuits and high frame rate displays using the conventional TFT manufacturing process. The existence of spreading currents in amorphous indium‐gallium‐zinc oxide (a‐IGZO) TFTs with stripe‐patterned source/drain (S/D) electrodes is demonstrated. The device performances of the a‐IGZO TFTs with various widths of stripe‐patterned S/D electrodes and open spaces between them are compared. The drain currents of the a‐IGZO TFTs are almost same when the width of open space changes from 0 to 10 µm because of the existence of spreading currents. The overlap capacitance between gate and S/D of the a‐IGZO TFTs can be significantly reduced without scarifying drain currents by using stripe‐patterned S/D electrodes. The operation frequency of the ring oscillator made of the TFTs with stripe S/D electrodes with 10 µm open space width is 2.5 times that made of the conventional a‐IGZO TFTs. This spreading current concept can be widely used for the design of oxide TFT array with low RC (resistance capacitance product) delay for high‐speed circuits.

中文翻译：

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通过使用条形图式源极/漏极电极，在不影响漏极电流的情况下减少铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT）的寄生电容

提出了一种新的氧化物薄膜晶体管（TFT）的器件结构，该器件具有较低的重叠电容且不会影响漏极电流。可将其用于使用常规TFT制造工艺的高速电路和高帧率显示器。演示了带有条纹图案化源/漏（S / D）电极的非晶铟镓锌氧化（a-IGZO）TFT中存在扩散电流。比较了具有各种宽度的条状S / D电极和它们之间的开放空间的a-IGZO TFT的器件性能。当开放空间的宽度从0变为10 µm时，由于存在扩散电流，a-IGZO TFT的漏极电流几乎相同。通过使用条纹图案化的S / D电极，可以显着减少a-IGZO TFT的栅极和S / D之间的重叠电容，而不会影响漏极电流。由带条纹S / D电极且开口空间宽度为10 µm的TFT制成的环形振荡器的工作频率是传统a-IGZO TFT的2.5倍。这种扩展电流的概念可广泛用于高速电路的具有低RC（电阻电容乘积）延迟的氧化物TFT阵列的设计。