In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors using 40 nm thick Al2O3 deposited by Atomic Layer Deposition at 380 °C and then annealed at 500 °C in vacuum conditions. The high quality of Al2O3 and an Al2O3/diamond interface is verified thanks to electrical measurements and Transmission Electron Microscopy (TEM) measurements. A density of interface states lower than 1012 eV−1 cm−2 is measured from the flat-band regime to the depletion regime. The shift of the flat-band voltage and the leakage current through the oxide are significantly reduced in good agreement with the mono-crystalline character of the Al2O3 layer revealed by TEM.In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors using 40 nm thick Al2O3 deposited by Atomic Layer Deposition at 380 °C and then annealed at 500 °C in vacuum conditions. The high quality of Al2O3 and an Al2O3/diamond interface is verified thanks to electrical measurements and Transmission Electron Microscopy (TEM) measurements. A density of interface states lower than 1012 eV−1 cm−2 is measured from the flat-band regime to the depletion regime. The shift of the flat-band voltage and the leakage current through the oxide are significantly reduced in good agreement with the mono-crystalline character of the Al2O3 layer revealed by TEM.

中文翻译：

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用于 MOSFET 制造的高质量 Al2O3/(100) 氧封端金刚石界面

在这封信中，我们报告了栅极控制的 Al2O3/(100) 硼掺杂（B 掺杂）氧封端金刚石（O-金刚石）金属氧化物半导体电容器的改进，该电容器使用 40 nm 厚的 Al2O3 通过原子层沉积以 380°沉积C，然后在真空条件下在 500°C 下退火。由于电测量和透射电子显微镜 (TEM) 测量，验证了 Al2O3 和 Al2O3/金刚石界面的高质量。从平带状态到耗尽状态测量低于 1012 eV-1 cm-2 的界面态密度。平带电压的偏移和通过氧化物的漏电流显着降低，与 TEM 显示的 Al2O3 层的单晶特性非常吻合。在这封信中，我们报告了栅极控制的 Al2O3/(100) 掺硼（B 掺杂）氧端基金刚石（O-金刚石）金属氧化物半导体电容器的改进，使用 40 nm 厚的 Al2O3 通过原子层沉积在 380°C 下沉积，然后退火在 500 °C 的真空条件下。由于电测量和透射电子显微镜 (TEM) 测量，验证了 Al2O3 和 Al2O3/金刚石界面的高质量。从平带状态到耗尽状态测量低于 1012 eV-1 cm-2 的界面态密度。平带电压的偏移和通过氧化物的漏电流显着降低，与 TEM 显示的 Al2O3 层的单晶特性非常吻合。