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Electrical tuning of the band alignment and magnetoconductance in an n-type ferromagnetic semiconductor (In,Fe)As-based spin-Esaki diode
Applied Physics Letters ( IF 4 ) Pub Date : 2018-03-05 , DOI: 10.1063/1.5010020
Le Duc Anh 1, 2 , Pham Nam Hai 3, 4 , Masaaki Tanaka 1, 4
Affiliation  

We report a strong bias dependence of the magnetoconductance (MC) of a spin-Esaki diode composed of n+-type ferromagnetic semiconductor (FMS) (In,Fe)As and p+-type Be doped InAs grown on a p+-InAs (001) substrate by molecular beam epitaxy. When the bias voltage V is increased above 450 mV in the forward bias, we found that the MC, measured at 3.5 K under a magnetic field H of 1 T in the in-plane [110] direction, changes its sign from positive to negative and its magnitude rises rapidly from 0.5% at V < 450 mV to −7.4% at V = 650 mV. Furthermore, the MC magnitude decreases as cos2(θ) when rotating H from the in-plane [110] direction to the perpendicular [001] direction, where θ is the angle between H and the [110] axis. Using a two-fluid model, we explain both the magnitude and the anisotropy of the MC based on the evolution of the spin-Esaki diode's band profile with V. This analysis provides insights into the density of states and spin-polarization of the conduction band and the Fe-related impurity band ...

中文翻译:

n 型铁磁半导体 (In,Fe)As 基自旋江崎二极管中能带排列和磁导的电调谐

我们报告了由 n+ 型铁磁半导体 (FMS) (In,Fe)As 和 p+ 型 Be 掺杂 InAs 组成的自旋江崎二极管的磁导 (MC) 的强烈偏置依赖性在 p+-InAs (001) 上生长分子束外延基板。当正向偏置中的偏置电压 V 增加到 450 mV 以上时,我们发现在面内 [110] 方向的 1 T 磁场 H 下以 3.5 K 测量的 MC 的符号从正变为负它的幅度从 V < 450 mV 时的 0.5% 迅速上升到 V = 650 mV 时的 -7.4%。此外,当将 H 从面内 [110] 方向旋转到垂直 [001] 方向时,MC 大小随着 cos2(θ) 减小,其中 θ 是 H 与 [110] 轴之间的角度。使用二流体模型,
更新日期:2018-03-05
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