Abstract During the fabrication process of AlGaN/GaN HEMTs, SiNx films grown by plasma enhanced chemical vapor deposition (PECVD) are usually utilized to passivate AlGaN/GaN surface. However, PECVD with high energy of plasma would induce the surface damage. Plasma in plasma enhanced atom layer deposition (PEALD) process is gentle and remote. Consequently, AlN films grown by PEALD are explored as passivation layer on AlGaN/GaN surface. In comparison with PECVD SiNx, AlN film grown by PEALD, accompanied with 850 °C rapid temperature annealing (RTA), can improve 2DEG mobility 16.4%, the peak transconductance 38.6%, saturation drain current 26.3%, reduce static on-resistance 19.2%, and dynamic on-resistance only increased 14% after 50 V off-state stress and 200 μs recovering time. The annealing process at 850 °C changed AlN film polycrystalline structure and generated positive polarization charges of 3.6 × 1012 cm−2 at AlN/GaN heterojunction, which compensated the deep-level trap charging effect, and suppressed current collapse and increase of dynamic on-resistance.

中文翻译：

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多晶AlN薄膜对AlGaN/GaN高电子迁移率晶体管动态性能的影响

摘要 在AlGaN/GaN HEMTs的制备过程中，通常利用等离子体增强化学气相沉积（PECVD）生长的SiNx薄膜钝化AlGaN/GaN表面。然而，具有高等离子体能量的PECVD会引起表面损伤。等离子体增强原子层沉积 (PEALD) 工艺中的等离子体温和且远程。因此，通过 PEALD 生长的 AlN 薄膜被探索作为 AlGaN/GaN 表面上的钝化层。与PECVD SiNx相比，PEALD生长的AlN薄膜，伴随850°C快速温度退火（RTA），可提高2DEG迁移率16.4%，峰值跨导38.6%，饱和漏电流26.3%，降低静态导通电阻19.2% ，并且在 50 V 断态应力和 200 μs 恢复时间后，动态导通电阻仅增加了 14%。