In this study, free-standing phenylethylammonium lead halide perovskite (i.e. (PEA)₂PbX₄ (PEA = C₈H₉NH₃, X = Cl, Br, and I)) nanosheets (NSs) with few-layer thickness were synthesized using a facile antisolvent method. The as-prepared (PEA)₂PbX₄ NSs could be well-dispersed in organic solvents such as toluene and hexane. By incorporating the (PEA)₂PbX₄ NSs into poly(3-hexylthiophene) (P3HT) in toluene, (PEA)₂PbX₄ NSs: P3HT composite films were fabricated as channel layers for field-effect transistors (FETs) through spin coating. All of the resultant FETs show promising hole transport and current saturation behaviour at room temperature. Notably, the FET based on (PEA)₂PbI₄ NSs: P3HT exhibited the best hole mobility, μ_h, of 1.43 × 10⁻¹ cm² V⁻¹ s⁻¹ and threshold voltage, V_th, of 5.19 V. These results pave a new way for the application of 2D organic–inorganic hybrid perovskite NSs as channel materials in high-performance FETs.

中文翻译：

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用于聚合物场效应晶体管的超薄二维有机-无机杂化钙钛矿纳米片的合成†

在这项研究中，合成了具有很少层厚度的自立式苯基乙基铵卤化铅钙钛矿（即（PEA）₂ PbX ₄（PEA = C ₈ H ₉ NH ₃，X = Cl，Br和I））纳米片（NSs）。使用简便的抗溶剂方法。所制备的（PEA）₂ PbX ₄ NSs可以很好地分散在有机溶剂中，例如甲苯和己烷。通过将（PEA）₂ PbX ₄ NS掺入甲苯中的聚（3-己基噻吩）（P3HT）中，（PEA）₂ PbX ₄NSs：通过旋涂将P3HT复合膜制造为场效应晶体管（FET）的沟道层。所有所得的FET在室温下都显示出有希望的空穴传输和电流饱和行为。值得注意的是，该FET基于（PEA）_2个碘化铅₄奈米：P3HT表现出最佳的空穴迁移率，μ _ħ，1.43×10的^-1厘米² V ^-1小号^-1和阈值电压，V_日5.19 V.这些的，结果为在高性能FET中将2D有机-无机杂化钙钛矿NSs用作沟道材料开辟了一条新途径。