With their electron-rich skeletons, acenes have traditionally been used as hole transporting materials in organic electronic applications. However, prudent structural modifications and revision of the structure of devices can yield good electron mobilities from acene-based organic semiconductors (OSCs). The majority of OSCs predominantly exhibit hole transporting behaviour and there is a scarcity of efficient and operationally stable n-type materials. Organic field effect transistors (OFETs) have been proved to be commercially viable alternatives to their inorganic counterparts, and there is increased need for efficient electron transporting materials in n-channel OFETs to build complementary circuit elements. This has boosted thorough investigation into acene-based n-type materials. In this review, various strategies are discussed for chemical modification of acenes for n-channel OFETs.

中文翻译：

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对N通道OFET材料的并苯改性

炔烃凭借其富含电子的骨架，传统上已被用作有机电子应用中的空穴传输材料。但是，谨慎的结构修改和设备结构的修改可以从基于并苯的有机半导体（OSC）获得良好的电子迁移率。大多数OSC主要表现出空穴传输行为，并且缺乏有效且操作稳定的n型材料。有机场效应晶体管（OFET）已被证明是其无机替代品的商业可行替代品，并且对在n沟道OFET中有效的电子传输材料来构建互补电路元件的需求日益增长。这促进了对并苯类n型材料的深入研究。在这篇评论中，