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Publisher Correction: Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies
Nature Materials ( IF 41.2 ) Pub Date : 2018-03-06 , DOI: 10.1038/s41563-018-0043-3 Naresh B. Kotadiya , Hao Lu , Anirban Mondal , Yutaka Ie , Denis Andrienko , Paul W. M. Blom , Gert-Jan A. H. Wetzelaer
Nature Materials ( IF 41.2 ) Pub Date : 2018-03-06 , DOI: 10.1038/s41563-018-0043-3 Naresh B. Kotadiya , Hao Lu , Anirban Mondal , Yutaka Ie , Denis Andrienko , Paul W. M. Blom , Gert-Jan A. H. Wetzelaer
Publisher Correction: Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies
中文翻译：
出版商更正：向高电离能有机半导体中注入欧姆空穴的通用策略
出版商更正：向高电离能有机半导体中注入欧姆空穴的通用策略
更新日期：2018-03-06
Publisher Correction: Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies, Published online: 06 March 2018; doi:10.1038/s41563-018-0043-3
Publisher Correction: Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies中文翻译：
出版商更正：向高电离能有机半导体中注入欧姆空穴的通用策略
出版商更正：向高电离能有机半导体中注入欧姆空穴的通用策略
出版商更正：向高电离能有机半导体中注入欧姆空穴的通用策略，在线发布：2018年3月6日; doi：10.1038 / s41563-018-0043-3
出版商更正：向高电离能有机半导体中注入欧姆空穴的通用策略
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