Polymeric materials have been widely used in the fabrication of data‐storage devices, owing to their unique advantages and defined conduction mechanisms. To date, the most‐functional polymers that have been reported for memory devices were synthesized through random copolymerization, whilst there have been no reports regarding the memory effect of block polymers. Herein, we synthesized a random copolymer (PMCz₈‐co‐PMBNa₂) and its corresponding block copolymer (PMCz₈‐b‐PMBNa₂) to study the effect of the method of polymerization on the memory properties of the corresponding devices. Interestingly, both devices (ITO/PMCz₈‐co‐PMBNa₂/Al and ITO/PMCz₈‐b‐PMBNa₂/Al) exhibited ternary memory performance, with threshold voltages of −1.7 V/−3.3 V and −2.7 V/−3.8 V, respectively. However, based on comprehensive measurements, the memory properties of PMCz₈‐co‐PMBNa₂ and PMCz₈‐b‐PMBNa₂ were found to be owing to the operation of different conduction mechanisms, which resulted from different molecular stacking in the film state. Therefore, we expect that this work will be helpful for improving our understanding of the conduction mechanisms in polymer‐based data‐storage devices.

中文翻译：

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侧链咔唑供体和萘二甲酰亚胺受体无规嵌段聚合对多级记忆性能的影响

高分子材料因其独特的优势和明确的传导机制而被广泛用于数据存储设备的制造中。迄今为止，已通过随机共聚合成了已报告用于记忆器件的功能最强的聚合物，但尚未见到有关嵌段聚合物记忆效应的报道。本文中，我们合成了无规共聚物（PMCz ₈ - co- PMBNa ₂）及其相应的嵌段共聚物（PMCz ₈ - b- PMBNa ₂），以研究聚合方法对相应器件的存储性能的影响。有趣的是，两种设备（ITO / PMCz ₈ - co- PMBNa₂ / Al和ITO / PMCz ₈ - b -PMBNa ₂ / Al）的表现出三元存储器性能，具有，分别-1.7 V / - 3.3V和-2.7 V / -3.8Ⅴ的阈值电压。然而，基于全面的测量，发现PMCz ₈ - co- PMBNa ₂和PMCz ₈ - b- PMBNa ₂的存储特性是由于不同的传导机制的运行所致，这是由于薄膜状态下的分子堆叠不同所致。因此，我们希望这项工作将有助于增进我们对基于聚合物的数据存储设备中的传导机制的理解。