The p–n junction is one important and fundamental building block of the optoelectronic age. However, electrons and holes will be severely scattered in heterostructures led by the grain boundary at the alloy interface between two dissimilar semiconductors. In this work, we present boron phosphide (BP) nanowires with artificially controllable carrier type for the fabrication of homojunctions via adjusting borane/phosphine ratio during the deposition process, both prove high crystallization with fewer impurities. The homojunctions that consist of n-type and p-type BP nanowires show apparent photovoltaic effect [external quantum efficiency ≈ 10% under a ∼0.4 pW light @ 600 nm] and the quenched photoluminescence within the junction area, which indicates the effective separation and transfer of photogenerated charge carriers at the interface. The achievement of controllable carrier type implemented in the same material ushers in a frontier for the design of nanoscale homojunctions toward advanced optoelectronic devices.

中文翻译：

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磷化硼纳米线中向同质光电器件的可控载流子类型

p–n结是光电时代的一个重要基础要素。然而，电子和空穴将在由两种不同半导体之间的合金界面处的晶界导致的异质结构中严重散射。在这项工作中，我们提出了具有人工可控载体类型的磷化硼（BP）纳米线，用于通过在沉积过程中调节硼烷/膦比例来制造同质结，均证明了高结晶度且杂质较少。由n型和p型BP纳米线组成的同质结表现出明显的光伏效应[在600 nm处约0.4 pW的光下，外部量子效率≈10％，@ 600 nm]，并且在结区域内具有淬灭的光致发光，表明有效的分离和光生载流子在界面处的转移。