Abstract Besides the well-known local sub-grain boundaries (SGBs) defects, monolike Si ingots grown by Directional Solidification present distributed background cellular dislocation structures. In the present work, the influence of stress level, time under stress, and doping by O and Ge, on the formation of dislocation cells in monolike silicon, is analysed. This is achieved by performing a comparative study of the dislocation structures respectively obtained during crystallisation of pilot scale monolike ingots on Czochralski (CZ) and monolike seeds, during annealing of Float Zone (FZ), CZ, and 1 × 10 20 at/cm 3 Ge-doped CZ (GCZ) samples, and during 4-point bending of FZ and GCZ samples at 1300 °C under resolved stresses of 0.3, 0.7 and 1.9 MPa during 1–20 h. Synchrotron X-ray White-beam Topography and Rocking Curve Imaging (RCI) are applied to visualize the dislocation arrangements and to quantify the spatial distribution of the associated lattice distortions. Annealed samples and samples bent under 0.3 MPa present dislocation structures corresponding to transient creep stages where dislocations generated from surface defects are propagating and multiplying in the bulk. The addition of the hardening element Ge is found to block the propagation of dislocations from these surface sources during the annealing test, and to retard dislocation multiplication during bending under 0.3 MPa. On the opposite, cellular structures corresponding to the final stationary creep stage are obtained both in the non-molten seeds and grown part of monolike ingots and in samples bent under 0.7 and 1.9 MPa. A comparative discussion is made of the dynamics of formation of these final dislocation structures during deformation at high temperature and monolike growth.

中文翻译：

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单晶硅中的细胞位错模式：应力的影响、应力下的时间和杂质掺杂

摘要 除了众所周知的局部亚晶界 (SGBs) 缺陷外，定向凝固生长的单晶硅锭呈现分布的背景细胞位错结构。在目前的工作中，分析了应力水平、应力下的时间以及 O 和 Ge 的掺杂对类单晶硅中位错胞形成的影响。这是通过对在 Czochralski (CZ) 和 monolike 晶种上中试规模的 Monolike 晶锭结晶过程中分别获得的位错结构进行比较研究来实现的，在 Float Zone (FZ)、CZ 和 1 × 10 20 at/cm 3 的退火过程中Ge 掺杂的 CZ (GCZ) 样品，以及 FZ 和 GCZ 样品在 1300 °C 下在 1-20 小时内在 0.3、0.7 和 1.9 MPa 的分辨应力下进行 4 点弯曲期间。同步加速器 X 射线白束形貌和摇摆曲线成像 (RCI) 用于可视化位错排列并量化相关晶格畸变的空间分布。退火样品和在 0.3 MPa 下弯曲的样品呈现与瞬态蠕变阶段相对应的位错结构，其中由表面缺陷产生的位错在整体中传播和繁殖。发现添加硬化元素 Ge 可在退火测试期间阻止来自这些表面源的位错传播，并在 0.3 MPa 下的弯曲过程中延迟位错增殖。相反，在非熔融种子和单晶锭的生长部分以及在 0.7 和 1.9 MPa 下弯曲的样品中，都获得了对应于最终静止蠕变阶段的细胞结构。