We explored surface charge transfer interaction between a family of phthalocyanine (Pc) compounds and transition metal dichalcogenides (TMDs). Comparing the device characteristics of TMD field-effect transistors (FETs), we demonstrate both p-type and n-type doping of TMDs by tuning the work function of the metal substitution in the Pc compound. Our findings suggest a near linear correlation between the metal work function and doping level. Such doping predictability has yet to be achieved whereas we provide here the first report of its kind.

中文翻译：

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酞菁化合物中金属功函数调节对过渡金属二卤化物的受控掺杂†

我们探索了酞菁（Pc）化合物家族与过渡金属二硫代双胍（TMDs）之间的表面电荷转移相互作用。比较TMD场效应晶体管（FET）的器件特性，我们通过调整Pc化合物中金属取代的功函来证明TMD的p型和n型掺杂。我们的发现表明，金属功函数与掺杂水平之间存在近乎线性的相关性。这种掺杂的可预测性尚未实现，而我们在此提供了此类报告的第一份。