Abstract As one of the most appealing two-dimensional materials, graphene (Gr) has attracted tremendous research interest in optoelectronic device applications for its plenty of exceptional electrical and optical properties. The emergence of Gr/semiconductor hybrid heterostructures provides a promising platform for assembling high-performance optoelectronic devices that can overcome intrinsic limitations of Gr. However, although significant achievements have been made, many challenges still exist. Here, we comprehensively review the progress in the development of various optoelectronic devices based on Gr/semiconductor hybrid heterostructures, including /group II-VI nanostructures, /group III-V semiconductors, /group IV semiconductors, /metal oxides and /other semiconductors, in terms of the device design, device performance and physics, processing techniques for performance optimization, etc. In the final section, conclusions of the existing techniques are presented and future challenges in optoelectronic applications of Gr/semiconductor hybrid heterostructures are addressed.

中文翻译：

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用于光电器件应用的石墨烯/半导体混合异质结构

摘要 作为最具吸引力的二维材料之一，石墨烯 (Gr) 以其优异的电学和光学特性在光电器件应用中引起了极大的研究兴趣。Gr/半导体混合异质结构的出现为组装高性能光电器件提供了一个有前途的平台，可以克服 Gr 的固有局限性。然而，尽管取得了重大成就，但仍存在许多挑战。在这里，我们全面回顾了基于Gr/半导体混合异质结构的各种光电器件的发展进展，包括/II-VI族纳米结构、/III-V族半导体、/IV族半导体、/金属氧化物和/其他半导体，在器件设计、器件性能和物理方面，