Two‐dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties. A comprehensive first‐principles study is reported of the intrinsic electrical resistivity of emerging borophene structures. The resistivity is highly dependent on different polymorphs and electron densities of borophene. Interestingly, a universal behavior of the intrinsic resistivity is well‐described using the Bloch–Grüneisen model. In contrast to graphene and conventional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities, while the Bloch–Grüneisen temperature is nearly fixed at 100 K. This work suggests that monolayer boron can serve as intriguing platform for realizing tunable two‐dimensional electronic devices.

中文翻译：

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二维金属硼砂中本征电阻的通用标度

二维硼片（硼烯）已在实验中成功合成，并有望表现出令人着迷的运输性能。一项全面的第一性研究报告了新兴的硼苯结构的固有电阻率。电阻率高度依赖于硼烷的不同多晶型物和电子密度。有趣的是，使用Bloch-Grüneisen模型很好地描述了本征电阻率的通用行为。与石墨烯和常规金属相比，可以通过调节载流子密度轻松地调节硼烯的固有电阻率，而Bloch–Grüneisen温度则几乎固定在100K。这项工作表明，单层硼可以作为实现两个可调谐的引人入胜的平台三维电子设备。