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Performance Improvement of Graphene/Silicon Photodetectors Using High Work Function Metal Nanoparticles with Plasma Effect
Advanced Optical Materials ( IF 9 ) Pub Date : 2018-02-27 , DOI: 10.1002/adom.201701243
Ming Hu 1 , Yucong Yan 1 , Kun Huang 1 , Afzal Khan 1 , Xiaodong Qiu 1 , Dikai Xu 1 , Hui Zhang 1 , Xuegong Yu 1 , Deren Yang 1
Affiliation  

Graphene/silicon (Gr/Si) photodetectors have attracted much attention recently for their simple fabrication and satisfactory performance. However, the responsivity is relatively low compared to other visible detectors. Herein, plasma effects are induced to enhance the photon absorption by covering random platinum nanoparticles (Pt NPs) on top of the devices. Consequently, a stronger built‐in electric field in the Gr/Si photodetectors is generated due to the high work function of Pt. Their responsivity can reach up to 1.68 × 107 AW−1, which is one order of magnitude higher than the pristine devices. Furthermore, the response time is found to be less than 180 ns because of low trap states density at interface. The obtained results suggest a facile and universal way to optimize the performance of Gr/Si photoelectric devices.

中文翻译:

使用具有等离子体效应的高功函数金属纳米粒子改善石墨烯/硅光电探测器的性能

近年来,石墨烯/硅(Gr / Si)光电探测器因其简单的制造和令人满意的性能而备受关注。但是,与其他可见光检测器相比,响应度相对较低。在本文中,通过覆盖器件顶部的随机铂纳米颗粒(Pt NPs),诱导等离子体效应以增强光子吸收。因此,由于Pt的高功函,在Gr / Si光电探测器中产生了更强的内置电场。它们的响应度可以达到1.68×10 7 AW -1,比原始设备高一个数量级。此外,由于界面处陷阱态密度低,因此发现响应时间小于180 ns。获得的结果表明了一种简便且通用的方式来优化Gr / Si光电器件的性能。
更新日期:2018-02-27
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