Non-volatile heterojunction transistor memory was fabricated by successively depositing pentacene/tris(8-hydroxy quinoline) aluminum(Alq₃) layers. In this specified configuration, pentacene functioned as the active layer between the source and drain of field-effect transistor memory, and Alq₃ was adopted as the charge-trapping layer. Operation of non-volatile memory was implemented by an electrical writing and light illumination erasing procedure. Band bending between pentacene and Alq₃ due to the formation of a type II heterojunction prohibited back-injection of trapped charges, which demonstrated hysteresis for the transfer characteristics. The specified heterojunction structure (without a tunneling layer) enabled carriers to facilely transport between the active layer and charge trapping layer. Therefore, a large memory window (40.3 V, for a programming voltage of −80 V) and fast writing speed of less than 1 μs were demonstrated; in addition, the 1-bit non-volatile memory device showed a moderate retention time of more than 2 years. The large memory window, fast writing speed, and long retention time can potentially enable practical applications of non-volatile memory.

通过依次沉积并五苯/三（8-羟基喹啉）铝（Alq ₃）层来制造非易失性异质结晶体管存储器。在此指定的配置中，并五苯用作场效应晶体管存储器的源极和漏极之间的有源层，而Alq ₃被用作电荷俘获层。非易失性存储器的操作是通过电写入和光照明擦除程序实现的。并五苯与Alq ₃之间的能带弯曲由于形成了II型异质结，因此禁止了向后注入捕获的电荷，这证明了传输特性的滞后现象。指定的异质结结构（无隧道层）使载流子能够在有源层和电荷捕获层之间轻松传输。因此，证明了较大的存储窗口（对于编程电压为-80 V，为40.3 V，对于小于1μs的快速写入速度）；此外，该1位非易失性存储器件的中度保留时间超过2年。大的内存窗口，快速的写入速度和长的保留时间可以潜在地实现非易失性存储器的实际应用。