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A Novel Domain‐Confined Growth Strategy for In Situ Controllable Fabrication of Individual Hollow Nanostructures
Advanced Science ( IF 15.1 ) Pub Date : 2018-02-26 , DOI: 10.1002/advs.201700213
Luping Tang 1 , Longbing He 1, 2 , Lei Zhang 1, 2 , Kaihao Yu 1 , Tao Xu 1 , Qiubo Zhang 1 , Hui Dong 1 , Chao Zhu 1 , Litao Sun 1, 2
Affiliation  

The manipulation and tailoring of the structure and properties of semiconductor nanocrystals (NCs) is significant particularly for the design and fabrication of future nanodevices. Here, a novel domain‐confined growth strategy is reported for controllable fabrication of individual monocrystal hollow NCs (h‐NCs) in situ inside a transmission electron microscope, which enables the atomic scale monitoring of the entire reaction. During the process, the preformed carbon shells serve as nanoreaction cells for the formation of CdSeS h‐NCs. Electron beam (e‐beam) irradiation is demonstrated to be the key activation factor for the solid‐to‐hollow shape transformation. The formation of CdSeS hollow NCs is also found to be sensitive to the volume ratio of the CdSe/CdS NCs to the carbon shell and only those CdSe/CdS NCs with a volume ratio in the range 0.2–0.8 are successfully converted into hollow NCs. The method paves the way to potentially use an e‐beam for the in situ tailoring of individual semiconductor NCs targeted toward future nanodevice applications.

中文翻译:

用于单个空心纳米结构的原位可控制造的新型域受限生长策略

半导体纳米晶体(NCs)的结构和性能的操纵和定制对于未来的纳米器件的设计和制造尤其重要。在这里,报道了一种新型的有限域生长策略,用于可控地在透射电子显微镜内原位制造单个单晶空心NC(h-NC),从而能够对整个反应进行原子级监控。在此过程中,预制的碳壳充当CdSeS h-NCs形成的纳米反应池。电子束(电子束)辐射被证明是固体到空心形状转换的关键激活因素。还发现CdSeS空心NC的形成对CdSe / CdS NC与碳壳的体积比敏感,并且仅对体积比在0.2-0范围内的CdSe / CdS NC敏​​感。8个已成功转换为空心NC。该方法为潜在地使用电子束为针对未来纳米器件应用的单个半导体NC的原位定制铺平了道路。
更新日期:2018-02-26
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