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Passivation of interstitial and vacancy mediated trap-states for efficient and stable triple-cation perovskite solar cells
Journal of Power Sources ( IF 9.2 ) Pub Date : 2018-02-23 , DOI: 10.1016/j.jpowsour.2018.02.030
Md Arafat Mahmud , Naveen Kumar Elumalai , Mushfika Baishakhi Upama , Dian Wang , Vinicius R. Gonçales , Matthew Wright , Cheng Xu , Faiazul Haque , Ashraf Uddin

The current work reports the concurrent passivation of interstitial and oxygen vacancy mediated defect states in low temperature processed ZnO electron transport layer (ETL) via Ultraviolet-Ozone (UVO) treatment for fabricating highly efficient (maximum efficiency: 16.70%), triple cation based MA0.57FA0.38Rb0.05PbI3 (MA: methyl ammonium, FA: formamidinium, Rb: rubidium) perovskite solar cell (PSC). Under UV exposure, ozone decomposes to free atomic oxygen and intercalates into the interstitial and oxygen vacancy induced defect sites in the ZnO lattice matrix, which contributes to suppressed trap-assisted recombination phenomena in perovskite device. UVO treatment also reduces the content of functional hydroxyl group on ZnO surface, that increases the inter-particle connectivity and grain size of perovskite film on UVO treated ZnO ETL. Owing to this, the perovskite film atop UVO treated ZnO film exhibits reduced micro-strain and dislocation density values, which contribute to the enhanced photovoltaic performance of PSC with modified ZnO ETL. The modified PSCs exhibit higher recombination resistance (RRec) ∼40% compared to pristine ZnO ETL based control devices. Adding to the merit, the UVO treated ZnO PSC also demonstrates superior device stability, retaining about 88% of its initial PCE in the course of a month-long, systematic degradation study.



中文翻译:

间隙和空位介导的陷阱态的钝化,可实现高效,稳定的三阳离子钙钛矿太阳能电池

当前工作报告了通过紫外线-臭氧(UVO)处理在低温处理的ZnO电子传输层(ETL)中同时发生的间隙和氧空位介导的缺陷状态的钝化,以制造高效(最大效率:16.70%),基于三阳离子的MA 0.57 FA 0.38 Rb 0.05 PbI 3(MA:甲基铵,FA:甲ami,Rb:rub)钙钛矿太阳能电池(PSC)。在紫外线照射下,臭氧分解为游离的原子氧,并插入到ZnO晶格基质中的间隙和氧空位引起的缺陷位点中,这有助于抑制钙钛矿器件中的陷阱辅助重组现象。UVO处理还减少了ZnO表面的官能羟基含量,从而增加了UVO处理的ZnO ETL上钙钛矿薄膜的颗粒间连通性和晶粒尺寸。因此,在经UVO处理的ZnO膜上的钙钛矿膜表现出降低的微应变和位错密度值,这有助于通过改性ZnO ETL增强PSC的光伏性能。改性的PSC表现出更高的重组抗性(R Rec)与基于原始ZnO ETL的控制设备相比,约为40%。值得一提的是,经UVO处理的ZnO PSC还具有优异的器件稳定性,在为期一个月的系统降解研究过程中,保留了约88%的初始PCE。

更新日期:2018-02-23
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