Flexible threshold switch devices are essential for low‐power and high‐speed semiconductor devices. Especially, bidirectional threshold switch has been regarded as the ideal switching device for ultrahigh‐density crosspoint memory devices. Here, a flexible Pt/Ag‐doped ZnO/Pt switch on the flexible plastic substrate synthesized by electrochemical bottom‐up deposition is introduced. The flexible switch has bidirectional threshold switching behavior with ultralow off‐current, high selectivity (≈10⁷), and super‐steep threshold slope. The bidirectional threshold switching behavior is related to migration of silver ions to form Ag filament. This device shows stable electrical properties, endures constant voltage stress, and retains good reliability under mechanical stress. It is believed that this study would open up new possibilities for high‐density flexible memory devices by introducing flexible novel bidirectional, high‐performance switching devices for emerging flexible electronics.

中文翻译：

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解决方案处理的灵活阈值开关设备

灵活的阈值开关器件对于低功耗和高速半导体器件至关重要。特别是，双向阈值开关被认为是超高密度交叉点存储设备的理想开关设备。在此，介绍了通过电化学自下而上沉积合成的柔性塑料基板上的柔性Pt / Ag掺杂ZnO / Pt开关。柔性开关具有具有超低（双向阈值开关特性的截止电流，高选择性≈10 ⁷）和超陡峭的阈值斜率。双向阈值切换行为与银离子迁移形成Ag灯丝有关。该器件显示出稳定的电性能，承受恒定的电压应力，并在机械应力下保持良好的可靠性。可以相信，这项研究将通过为新兴的柔性电子设备引入新型的新颖的双向高性能开关设备，为高密度的柔性存储设备开辟新的可能性。