Even though anodizing has been proved to be a highly efficient oxidation approach of single crystal SiC, the oxidation mechanism is still unrevealed. In this work, the initiation and development of the local oxidation phenomenon during anodizing of SiC have been experimentally studied. Local oxidation occurred on the charge carrier-rich areas like damaged areas and doping sites. The oxidation of the damaged areas has a higher priority compared with that of doping sites during anodizing of SiC. For anodizing of damaged areas, the protrusions generated by local oxidation gathered around the damaged areas. In contrast, protrusions were randomly distributed for anodizing of doping sites.

尽管已证明阳极氧化是单晶SiC的高效氧化方法，但氧化机理仍未揭示。在这项工作中，已经对SiC阳极氧化过程中局部氧化现象的发生和发展进行了实验研究。局部氧化发生在电荷载流子丰富的区域，例如受损区域和掺杂位点。与SiC阳极氧化过程中的掺杂部位相比，受损区域的氧化具有更高的优先级。为了对受损区域进行阳极氧化处理，局部氧化产生的突起聚集在受损区域周围。相反，突起被随机分布以对掺杂位点进行阳极氧化。