Piezo‐phototronic devices, where optoelectrical properties are directly influenced by mechanical stimuli, are highly desirable for applications in wearable devices and human–machine interfaces. Here, the piezoelectric and piezo‐phototronic properties of GaSe nanosheets, a layered metal‐monochalcogenide III–VI semiconductor with interesting piezoelectric, optical excitation, and semiconducting properties are investigated. A giant piezo‐phototronic response in GaSe is demonstrated for the first time. The out‐of‐plane local field due to band gap modulation drives the electrons (holes) to move toward the outer (inner) surface of wrinkles, which enhances electron–hole pair generation and the related photocurrent. Moreover, manual bending of GaSe reliably enhances the photocurrent by more than a factor of 50 at room temperature. This giant and linear piezo‐phototronic response combined with excellent stretchability suggests that GaSe is a valuable material for flexible optoelectronic‐mechanical applications.

中文翻译：

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层状GaSe纳米片中的巨型和线性压电光电子响应

光电性能直接受机械刺激影响的压电光电设备非常适合可穿戴设备和人机界面中的应用。在这里，我们研究了GaSe纳米片，具有有趣的压电，光激发和半导体性质的层状金属单硫族化物III-VI半导体的压电和压电性质。首次展示了GaSe中巨大的压电光电响应。带隙调制导致的平面外局部电场驱使电子（空穴）向皱纹的外表面（内表面）移动，从而增强了电子空穴对的产生和相关的光电流。此外，GaSe的手动弯曲可在室温下可靠地将光电流提高50倍以上。