Metal organic vapor phase epitaxy is used to grow gallium arsenide (GaAs) nanocrystals (NCs) on germanium (Ge) templates on nanoscopic silicon (Si) threads prepared by reactive ion etching. Scanning transmission electron microscopy with energy dispersive X‐ray measurements shows an epitaxial growth of the GaAs on the Ge template that is supported by the Si thread, and that Ge doping is induced to the GaAs by the template. On Ge templates of about 60 nm diameter, as‐grown GaAs NCs show a very regular rhombic‐dodecahedral outer shape that can be explained by a preferential growth along the <110> plane. Photoluminescence measurements of the Ge/GaAs structures reveal radiative emission peaks on top of the GaAs band‐to‐band emission and at sub‐band gap energies. While high energy peaks are originating from Ge acceptor levels in GaAs, sub‐band gap peaks can be explained by radiation from Ge donor and acceptor bands that are amplified by photonic modes hosted in the rhombic‐dodecahedral GaAs NCs. This study shows that a template‐assisted crystal growth at the nanoscale opens up routes for a versatile integration of strongly emitting nanomaterials for a use in on‐chip solid state lighting and photonics.

中文翻译：

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锗模板辅助在硅上集成砷化镓纳米晶体：现代光电材料的多功能平台

金属有机气相外延用于在通过反应离子刻蚀制备的纳米硅（Si）螺纹上的锗（Ge）模板上生长砷化镓（GaAs）纳米晶体（NCs）。扫描电子显微镜用能量色散X射线测量显示Ga模板上GaAs的外延生长，该模板由Si线支撑，Ge模板诱导Ga掺杂。在直径约60 nm的Ge模板上，生长的GaAs NC显示出非常规则的菱形十二面体外形，这可以通过沿<110>平面优先生长来解释。Ge / GaAs结构的光致发光测量显示，在GaAs带间发射的顶部以及子带隙能量处的辐射发射峰。尽管高能峰源自GaAs中的Ge受体能级，子带隙峰可以用菱形十二面体GaAs NC中的光子模式放大的Ge供体和受体带的辐射来解释。这项研究表明，以模板为辅助的晶体在纳米尺度上的生长为强集成纳米材料的通用集成开辟了途径，这些材料可用于片上固态照明和光子学。