Abstract We present a comprehensive overview on a new hybrid sputtering-evaporation (HSE) system for the deposition of Cu(In,Ga) Se2 (CIGS) thin-films aimed at photovoltaic applications. Such a technique employs the sputtering process to deposit the metal precursors on suitable rotating transfer cylinders, from which they are subsequently evaporated, in Se atmosphere, on the substrate. This procedure allows to combine the features of both the sputtering and evaporation techniques, enabling a fine tuning of the stoichiometry and an easy transfer to industrial processes. The key elements of this growth method are here explained in detail. The HSE CIGS layers have been investigated through secondary ion mass spectrometry, Raman and photoluminescence spectroscopies, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy. Moreover, the solar cell performance of the grown films has been investigated, through external quantum efficiency and J-V curves under 1 Sun illumination measurements. The obtained experimental results are exhaustively shown and discussed, indicating advantages and open issues of the presented deposition technique.

中文翻译：

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混合溅射蒸发法生长的 CIGS 薄膜：特性和光伏性能

摘要 我们全面概述了一种新的混合溅射 - 蒸发 (HSE) 系统，用于沉积用于光伏应用的 Cu(In,Ga) Se2 (CIGS) 薄膜。这种技术采用溅射工艺将金属前体沉积在合适的旋转转移滚筒上，然后在硒气氛中将金属前体从该滚筒上蒸发到基材上。该过程允许结合溅射和蒸发技术的特点，实现化学计量的微调并易于转移到工业过程。这里详细解释了这种增长方法的关键要素。HSE CIGS 层已经通过二次离子质谱、拉曼和光致发光光谱、X 射线衍射、扫描电子显微镜、能量色散 X 射线光谱进行了研究。此外，通过外部量子效率和 1 太阳光照测量下的 JV 曲线，研究了生长薄膜的太阳能电池性能。所获得的实验结果被详尽地显示和讨论，表明了所提出的沉积技术的优点和未解决的问题。