Abstract Despite the advantage of chemical vapor deposition (CVD) for realization of large area epitaxial growth of graphene on transition metal catalysts, both etching and transfer process of CVD-grown graphene sheets still remain a big challenge. Here we demonstrate the formation of multilayer graphene (MLG) sheets tailored from C60 thin films on the top of Si/Ni substrate without etching and transfer steps based on Ni films. This self-assembled process separates the MLG sheets from the conductive Ni catalyst, embarking a possibility for direct characterizations of MLG sheets. The fine-tuned C60 films (30 nm) are transformed into approximately 17 MLG sheets, thus making it large-area MLG sheets for a variety of direct applications.

中文翻译：

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同时蚀刻和转移 - 从 C 60 薄膜衍生的免费多层石墨烯片

摘要 尽管化学气相沉积 (CVD) 在过渡金属催化剂上实现石墨烯的大面积外延生长具有优势，但 CVD 生长的石墨烯片的蚀刻和转移过程仍然是一个很大的挑战。在这里，我们展示了在 Si/Ni 衬底顶部由 C60 薄膜定制的多层石墨烯 (MLG) 片的形成，无需基于 Ni 膜的蚀刻和转移步骤。这种自组装过程将 MLG 片材与导电镍催化剂分离，从而为 MLG 片材的直接表征提供了可能。微调的 C60 薄膜 (30 nm) 被转化为大约 17 个 MLG 片，从而使其成为用于各种直接应用的大面积 MLG 片。