We report on the realization of micropillars with site-controlled quantum dots (SCQDs) in the active layer. The SCQDs are grown via the buried stressor approach which allows for the positioned growth and device integration of a controllable number of QDs with high optical quality. This concept is very powerful as the number and the position of SCQDs in the cavity can be simultaneously controlled by the design of the buried stressor. The fabricated micropillars exhibit a high degree of position control for the QDs above the buried stressor and $Q$-factors of up to 12000 at an emission wavelength around 930 nm. We experimentally analyze and numerically model the cavity $Q$-factor, the mode volume, the Purcell factor and the photon-extraction efficiency as a function of the aperture diameter of the buried stressor. Exploiting these SCQD micropillars, we experimentally observe the Purcell enhancement in the single-QD regime with $F_P$ = 4.3 $\pm$ 0.3.

中文翻译：

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具有受控数量的位点控制量子点的微柱

我们报告了在有源层中实现具有位点控制量子点 (SCQD) 的微柱。SCQD 是通过埋入应力源方法生长的，该方法允许具有高光学质量的可控数量的 QD 的定位生长和器件集成。这个概念非常强大，因为可以通过掩埋应力源的设计同时控制空腔中 SCQD 的数量和位置。制造的微柱对掩埋应力源上方的 QD 表现出高度的位置控制，并且在 930 nm 左右的发射波长下，QD 因子高达 12000。我们通过实验分析和数值模拟腔 Q 因子、模式体积、珀塞尔因子和光子提取效率作为掩埋应力源孔径的函数。利用这些 SCQD 微柱，